Opinionated - China Chipping Away to Semiconductor Dominance

[patero]

A THIEF Nonetheless.
Others are just improvements and evolutionary development but exemplary PACKAGING(putting it all together), ADVERTISING and PROMOTION.
Mac OS is BSD unix clone, another example of COPYCAT and STEALING.

Steve Jobs is no doubt an excellent SALESMAN, maybe an innovative salesman.
.

Jobs was not a salesman, he was a strategist, one of the best strategic planners in the history of business. He pioneered strategic planning tools such as transitory competitive advantages and the Blue Ocean strategy (creation of uncontested market spaces).

He famously stated his derision for sales and marketing focus in companies such as Xerox.

 

[sinait]

Jobs was not a salesman, he was a strategist, one of the best strategic planners in the history of business. He pioneered strategic planning tools such as transitory competitive advantages and the Blue Ocean strategy (creation of uncontested market spaces).

He famously stated his derision for sales and marketing focus in companies such as Xerox.

You GO WORSHIP your WHITE MAN.
He is a SELFISH GREEDY THIEF to me, strategist, salesman or otherwise.

China have their own, and MANY MORE.
https://blogs.wsj.com/chinarealtime...man-who-got-u-s-aircraft-giant-boeing-flying/
The Chinese Birdman Who Got US Aircraft Giant Boeing Flying

Don't come out with anymore STUPID IDEAS that China needed GREEDY SELFISH THIEF like STEVE JOBS to succeed.
Maybe INDIANS need Steve Jobs and other WHITES, not the Chinese who have many and better talented patriots and have their own DEVELOPMENT PATH.

I DESPISE BANANA WHITE WORSHIPPERS.
.

 

[patero]

You GO WORSHIP your WHITE MAN.
He is a SELFISH GREEDY THIEF to me, strategist, salesman or otherwise.

China have their own, and MANY MORE.
https://blogs.wsj.com/chinarealtime...man-who-got-u-s-aircraft-giant-boeing-flying/
The Chinese Birdman Who Got US Aircraft Giant Boeing Flying

Don't come out with anymore STUPID IDEAS that China needed GREEDY SELFISH THIEF like STEVE JOBS to succeed.
Maybe INDIANS need Steve Jobs and other WHITES, not the Chinese who have many and better talented patriots and have their own DEVELOPMENT PATH.

I DESPISE BANANA WHITE WORSHIPPERS.
.

That's a very hateful post, you'll give yourself a hernia if you aren't careful.

Onto my ignore list with you.

 

[qwerrty]

next-gen RF front-end IC


------------------------------------------------
eetimes
NSI and Etra Jointly Announce First Wafer-Level Heterogeneous System Integration of GaAs on Silicon RF FEM
David Finch,
3-4 minutes
NINGBO, CHINA — Today, Ningbo Semiconductor International Corporation (NSI), a specialty semiconductor foundry in Ningbo, China, and Etra Semiconductor (Suzhou) Co., Ltd (Etra), an RF front-end devices and system solution provider in Suzhou, China, jointly announce an industry’s first RF FEM(Front-End Module) of heterogeneous integrated GaAs plus SOI circuits on Silicon using NSI’s proprietary micro wafer-level system integration technology (uWLSI®). Etra has demonstrated its first of such RF FEM in a package size of 2.5X1.5X0.25mm3, the most compact RF front-end device in current industry. The first series of such products are slated to production at NSI’s N1 Fab in the first half of 2019, primarily targeting for further size-constrained RF front-end chipsets in 4G and 5G handsets.

uWLSI® technology is a leading-edge wafer fabrication platform which enables extraordinary compactness of Etra’s GaAs pHEMT powered RF FEM chipset products and significant enhancement of RF characteristics of interconnects among its core components.” Etra claimed. “It is the key technology that helps to further simplify the chipset design and fabrication mostly through wafer-level fabrication and system testing.”

uWLSI®, a trademark of NSI standing for micro wafer-level system integration, is a unique middle-end wafer fabrication technology developed by NSI particularly for enabling heterogeneous multi-die-on-wafer system integration and wafer-level system testing while eliminating need for bumping and flip-chip processes in typical system-in-package practices.

NSI has developed the uWLSI® technology platform to specifically address surging need for high density heterogeneous system integration of a variety of chipsets and microsystems through more wafer level fabrication process. uWLSI® technology would not only empower the next generation of high performance, ultra-compact RF front-end modules by facilitating heterogeneous wafer-level system integration of various core components, including GaAs or GaN PA devices, RF filters, IPD, switches, tuners, LNAs and controllers, but also serve as a new competitive microsystem integration solution for a broader spectrum of microsystem applications including MCU, IoT and sensor fusion.” claimed by NSI.

Ningbo Semiconductor International Corporation (NSI) is a specialty semiconductor company in analog and specialty semiconductors, co-invested by Semiconductor Manufacturing International Corporation (SMIC), China Integrated Circuit Industry Investment Fund and other IC funds in China. Headquartered with a specialty semiconductor wafer manufacturing facility in Ningbo, China, NSI provides specialty wafer foundry and product design services to global IC and system customers in HV analog, RF front-end and optoelectronic microsystems.

Etra Semiconductor is a high-tech enterprise located in Suzhou, China. The company provides innovative specialty IC and system solutions for microwave and mm-wave wireless communication with specialty RF-FEM product offerings from switches, PA and filters.

 

[Bussard Ramjet]

next-gen RF front-end IC


------------------------------------------------
eetimes
NSI and Etra Jointly Announce First Wafer-Level Heterogeneous System Integration of GaAs on Silicon RF FEM
David Finch,
3-4 minutes
NINGBO, CHINA — Today, Ningbo Semiconductor International Corporation (NSI), a specialty semiconductor foundry in Ningbo, China, and Etra Semiconductor (Suzhou) Co., Ltd (Etra), an RF front-end devices and system solution provider in Suzhou, China, jointly announce an industry’s first RF FEM(Front-End Module) of heterogeneous integrated GaAs plus SOI circuits on Silicon using NSI’s proprietary micro wafer-level system integration technology (uWLSI®). Etra has demonstrated its first of such RF FEM in a package size of 2.5X1.5X0.25mm3, the most compact RF front-end device in current industry. The first series of such products are slated to production at NSI’s N1 Fab in the first half of 2019, primarily targeting for further size-constrained RF front-end chipsets in 4G and 5G handsets.

uWLSI® technology is a leading-edge wafer fabrication platform which enables extraordinary compactness of Etra’s GaAs pHEMT powered RF FEM chipset products and significant enhancement of RF characteristics of interconnects among its core components.” Etra claimed. “It is the key technology that helps to further simplify the chipset design and fabrication mostly through wafer-level fabrication and system testing.”

uWLSI®, a trademark of NSI standing for micro wafer-level system integration, is a unique middle-end wafer fabrication technology developed by NSI particularly for enabling heterogeneous multi-die-on-wafer system integration and wafer-level system testing while eliminating need for bumping and flip-chip processes in typical system-in-package practices.

NSI has developed the uWLSI® technology platform to specifically address surging need for high density heterogeneous system integration of a variety of chipsets and microsystems through more wafer level fabrication process. uWLSI® technology would not only empower the next generation of high performance, ultra-compact RF front-end modules by facilitating heterogeneous wafer-level system integration of various core components, including GaAs or GaN PA devices, RF filters, IPD, switches, tuners, LNAs and controllers, but also serve as a new competitive microsystem integration solution for a broader spectrum of microsystem applications including MCU, IoT and sensor fusion.” claimed by NSI.

Ningbo Semiconductor International Corporation (NSI) is a specialty semiconductor company in analog and specialty semiconductors, co-invested by Semiconductor Manufacturing International Corporation (SMIC), China Integrated Circuit Industry Investment Fund and other IC funds in China. Headquartered with a specialty semiconductor wafer manufacturing facility in Ningbo, China, NSI provides specialty wafer foundry and product design services to global IC and system customers in HV analog, RF front-end and optoelectronic microsystems.

Etra Semiconductor is a high-tech enterprise located in Suzhou, China. The company provides innovative specialty IC and system solutions for microwave and mm-wave wireless communication with specialty RF-FEM product offerings from switches, PA and filters.

I would like to know more. Who uses this company's RF ICs? What market shares do they have?

As far as I know, I can't find any smartphone maker who has ever used this company's RF Front end modules. What could the reason be?

 

[Jlaw]

I would like to know more. Who uses this company's RF ICs? What market shares do they have?

As far as I know, I can't find any smartphone maker who has ever used this company's RF Front end modules. What could the reason be?

I can answer that for you. No one uses their stuff or any Chinese products. China manufacture things for fun. It's the same thing as Indians argue for the sake of arguing or set up meetings to plan for future meetings

 

[oprih]

Lol this thread is surely making muricans and their diehard cheerleaders very nervous. They are so scared.

 

[qwerrty]

I would like to know more. Who uses this company's RF ICs? What market shares do they have?

As far as I know, I can't find any smartphone maker who has ever used this company's RF Front end modules. What could the reason be?

it's not how much market share they have to today. it's how much they will have in the future, because of american arrogance with their sanctions this sanctions that when you don't suck their dicks. it's like goodix and o-film announced their fingerprint tech few years ago with zero market share. now they are everywhere on chinese smartphones, samsung, dell, hp, apple; etc..

 

[JSCh]

February 07, 2019
China IC Production Forecast to Show a Strong 15% 2018-2023 CAGR

However, China’s indigenous IC production is still likely to fall far short of government targets.

China has been the largest consuming country for ICs since 2005, but large increases in IC production within China have not immediately followed, according to data presented in the new 500-page 2019 edition of IC Insights’ McClean Report—A Complete Analysis and Forecast of the Integrated Circuit Industry (released in January 2019). As shown in Figure 1, IC production in China represented 15.3% of its $155 billion IC market in 2018, up from 12.6% five years earlier in 2013. Moreover, IC Insights forecasts that this share will increase by 5.2 percentage points from 2018 to 20.5% in 2023.

Figure 1​

Currently, China-based IC production is forecast to exhibit a very strong 2018-2023 CAGR of 15%. However, considering that China-based IC production was only $23.8 billion in 2018, this growth is starting from a relatively small base. In 2018, SK Hynix, Samsung, Intel, and TSMC were the major foreign IC manufacturers that had significant IC production in China. In fact, SK Hynix’s 300mm China fab had the most installed capacity of any of its fabs in 2018 at 200,000 wafers per month (full capacity).

Intel’s 300mm fab in Dalian, China (Fab 68 that started MCU production in late October 2010), was idled in 3Q15 as the company switched the fab to 3D NAND flash manufacturing. This conversion was completed in late 2Q16. Intel’s China fab had an installed capacity of 70,000 300mm wafers per month in December of 2018 (full capacity).

In early 2012, Samsung gained approval from the South Korean government to construct a 300mm IC fabrication facility to produce NAND flash memory in in Xian, China. Samsung started construction of the fab in September of 2012 and production began in 2Q14. The company invested $2.3 billion in the first phase of the fab with $7.0 billion budgeted in total. This facility was the primary fab for 3D NAND production for Samsung in 2017 with an installed capacity of 100,000 wafers per month as of December 2018 (the company plans to expand this facility to 200,000 wafers per month).

Significant increases in IC sales over the next five years are also expected from existing indigenous Chinese companies including pure-play foundries SMIC and Huahong Group and memory startups YMTC and ChangXin Memory Technologies (CXMT, formerly Innotron). DRAM startup JHICC is currently on hold pending the sanctions imposed on the company by the U.S. Moreover, there are likely to be new companies looking to establish IC production in China like Taiwan-based Foxconn, which announced in December of 2018 that it intended to build a $9.0 billion fab in China to offer foundry services as well as produce TV chipsets and image sensors.

If China-based IC production rises to $47.0 billion in 2023 as IC Insights forecasts, it would still represent only 8.2% of the total forecasted 2023 worldwide IC market of $571.4 billion. Even after adding a significant “markup” to some of the Chinese producers’ IC sales figures (since many of the Chinese IC producers are foundries that sell their ICs to companies that re-sell these products to the electronic system producers), China-based IC production would still likely represent only about 10% of the global IC market in 2023.

Even with new IC production being established by China-based startups such as YMTC and CXMT, IC Insights believes that foreign companies will continue to be a large part of the IC production base in China. As a result, IC Insights forecasts that at least 50% of IC production in China in 2023 will come from foreign companies with fabs in China such as SK Hynix, Samsung, Intel, TSMC, UMC, GlobalFoundries, and Foxconn.

Given the sheer size of China’s investment plans over the next five years, it is likely that China will achieve some level of success with their strategy to become less reliant on IC imports. However, given increased government scrutiny of Chinese attempts at purchasing foreign technology companies and the legal challenges that the Chinese startups are likely to face in the future, IC Insights believes that China’s current strategy with regard to the IC industry will fall far short of the level of success that China’s government has targeted with its “Made in China 2025” plan (i.e., 40% self-sufficiency by 2020 and 70% by 2025).

Report Details: The 2019 McClean Report

Additional details on China’s IC market and other trends within the IC industry are provided in The McClean Report—A Complete Analysis and Forecast of the Integrated Circuit Industry (released in January 2019). A subscription to The McClean Report includes free monthly updates from March through November (including a 200+ page Mid-Year Update), and free access to subscriber-only webinars throughout the year. An individual-user license to the 2019 edition of The McClean Report is priced at $4,990 and includes an Internet access password. A multi-user worldwide corporate license is available for $7,990.

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http://www.icinsights.com/news/bull...n-Forecast-To-Show-A-Strong-15-20182023-CAGR/

 

[Han Patriot]

Lol this thread is surely making muricans and their diehard cheerleaders very nervous. They are so scared.

Uuuu I can feel the acidity rising in here. Yup, everyone needs to report to bussard where they use their chips, they manufacture stuff for fun.

 

[cirr]

SMIC To Start 14nm Mass Production in H1 2019

by Anton Shilov on February 8, 2019 1:00 PM EST

Reports have emerged this week that SMIC, the largest foundry in China, is set to start mass production using its in-house developed 14 nm FinFET manufacturing technology in the first half of this year. Notably, this comes at least a couple of quarters earlier than was initially expected, indicating that SMIC is apparently ahead of schedule. Meanwhile the company is already working on its post-14nm processes, as development of its 10 nm and EUV-enabled 7 nm fabrication processes are currently underway.

Based on various reports from China and Taiwan technical media, SMIC’s yields at 14 nm have reached 95%, which is more than sufficient to start mass production. Consequently, the foundry is gearing up for volume production of a 14 nm smartphone SoC in the first half of 2019. While SMIC naturally does not disclose name of their first 14nm customer, the company’s key clients are HiSilicon, Qualcomm, and Fingerprint Cards (FPC, which produces fingerprint sensors), so it's a relatively short list of potential candidates.

Analysts say that SMIC’s 14 nm capacity will be relatively small when compared to the industry leaders, all of whom run multiple leading-edge fabs. SMIC currently has two fabs that can process 300 mm wafers using 28 nm and larger fabrication processes. The same fabs will be used for 14 nm projects too, but given their capacities and SMIC’s very high fab utilization rate (94.1% in Q2 2018), do not expect them to make loads of 14 nm SoCs. And for these reasons, along with prepping 14nm for its current fabs, the company is building a large $10 billion fab that will be used for its leading-edge manufacturing technologies in the future.

“SMIC is getting $10 billion to build capacity for 14nm, 10nm and 7nm. They will have capacity for 70,000 wafers a month by Q4 in 2021,” said Handel Jones, chief executive of International Business Strategies (IBS). “The building is huge. They have bought some equipment, but nothing significant yet.”

That said, do not expect SMIC to produce SoCs using leading-edge FinFET process technologies in quantities that are comparable to other makers of semiconductors in the foreseeable future. Even if the company can line up the capacity, lining up the demand could prove trickier. 14 nm chips are expensive to design and build the masks for, which is why so much chip volume is still at 28 nm and larger

Overview of SMIC's Fabs

Process Technologies Capacity - Wafer Starts per Month - Location
BJ 200mm 90 nm - 150 nm 50,000 Beijing, China
300mm 28 nm - 65 nm 35,000
SH 200 mm 90 nm - 350 nm 120,000 Shanghai ,China
300 mm 28 nm - 65 nm 20,000
SZ 200 mm 90 nm - 350 nm 60,000 Shenzhen, China
TJ 200 mm 90 nm - 350 nm 50,000 Tianjin, China
LF 200 mm 90 nm - 180 nm 50,000 Avezzano, Italy

SMIC's latest progress slots in well with China's ambitious “Made in China 2025” plan. Under the plan, government planners want to achieve a 70% chip self-sufficiency by 2025, which having a leading-edge fab will help with. However there's doubt among analysts doubt that it is possible. Most of the ICs produced in China by 2025 will be made by companies based outside of the country.

Past 14nm, SMIC is already at work on its 10nm and 7nm processes as well, as previously confirmed by the company in 2018. Both processes are extremely costly to design, but since the semiconductor industry is growing in general and because of generous funding from the Chinese government (and various affiliated parties), SMIC has enough money for the necessary R&D. Working towards that goal, last year SMIC acquired an EUV step-and-scan system from ASML for $120 million, which is expected to be delivered early in 2019 for use in 7 nm process development and eventually mass production.

https://www.anandtech.com/show/13941/smics-14-nm-mass-production-in-1h-2019

 

[Bussard Ramjet]

it's not how much market share they have to today. it's how much they will have in the future, because of american arrogance with their sanctions this sanctions that when you don't suck their dicks. it's like goodix and o-film announced their fingerprint tech few years ago with zero market share. now they are everywhere on chinese smartphones, samsung, dell, hp, apple; etc..

Agree. Is there any news on how its products stack up against other firms. It is going against pretty big firms.

 

[j20blackdragon]

China will have no major GPU and FPGA vendors as such.

"While they did find a backdoor in a popular FPGA chip, there is no evidence the Chinese put it there, or even that it was intentionally malicious," writes Robert David Graham at Errata Security.

https://www.cnet.com/news/experts-dispute-threat-posed-by-backdoor-found-in-chinese-chip/

 

[Bussard Ramjet]

it's not how much market share they have to today. it's how much they will have in the future, because of american arrogance with their sanctions this sanctions that when you don't suck their dicks. it's like goodix and o-film announced their fingerprint tech few years ago with zero market share. now they are everywhere on chinese smartphones, samsung, dell, hp, apple; etc..

Hey any updates regarding YMTC- Yangtze Memory? They were planning until last year to have 64 layer NAND production by the end of this year. Any updates?

 

[qwerrty]

我国光通信技术取得突破性进展:实现Pb/s级光传输
来源：C114中国通信网 • 2019-02-13 09:06:09
近日，从中国信息通信科技集团传来喜讯，我国光通信技术再次取得突破性进展。光纤通信技术和网络国家重点实验室、国家信息光电子创新中心、烽火通信和光迅科技经过联合研究攻关，在国内首次实现1.06Pbit/s超大容量波分复用及空分复用的光传输系统实验，传输容量是目前商用单模光纤传输系统最大容量的10倍，可以在1秒之内传输约130块1TB硬盘所存储的数据。该实验采用了国内在光传输系统技术、光器件和光芯片技术、光纤光缆技术上最领先的研究成果，标志着我国在“超大容量、超长距离、超高速率”光通信系统研究领域再次迈向了新的台阶。

该系统设备在C+L波段内产生了375个光载波，基于硅光相干收发芯片实现了25GHz通道内的178.18Gbit/s DFTs-PDM-16QAM信号光收发，在单模19芯光纤内完成了光传输验证，传输总容量达到1.06Pbit/s，净频谱效率达到了113bit/s/Hz。经第三方检测验证，此次实现的“1.06Pbit/s超大容量单模多芯光纤光传输系统”为国内首次，达到了国际先进水平。

同时，此次实验所使用的核心光芯片和光纤均为自主研制，具有完全自主知识产权。硅光相干收发芯片由国家信息光电子创新中心、光纤通信技术和网络国家重点实验室、光迅科技和烽火通信联合研制，在一个不到30mm2的硅芯片上集成了包括光发送、调制、接收等近60个有源和无源光元件，且能支持C+L波段同时工作，是目前国内集成度最高的商用光子集成芯片。这次通过工艺及技术突破，解决了单模十九芯光纤的通道间串扰难题，相邻纤芯的隔离度优于-40dB，把“车道”与“车道”之间的干扰和影响降到了最低。

China's optical communications technology breakthrough: achieving Pb/s class optical transmission
Source: C114 China Communication Network • 2019-02-13 09:06:09

Recently, the Information and Communication Technology Group from China came the good news, China's optical communication technology breakthrough again. State Key Laboratory of fiber optic communications technology and networks, optoelectronics innovation State Information Center, the flames of communication and Accelink through joint research studies in the country for the first time 1.06Pbit/s large capacity wavelength division multiplexing optical transmission systems and space division multiplexing experiments the transmission capacity is the current commercial single-mode fiber transmission system has a maximum capacity of 10 times, the data can be stored in the hard disk 1TB transmitted in 1 to about 130 seconds. The experiment uses a domestic optical transmission systems, optical devices and light in chip technology, optical fiber cable leading technology research indicates that China in the "large capacity, long distance, high rate" of optical communication systems research field again Mai to a new level.

The apparatus generates in the system C + L band optical carrier 375, a silicon-based optical coherent transceiver chip implements 178.18Gbit / s DFTs-PDM-16QAM signals in the 25GHz optical transceiver channel 19 finished in a single-mode optical fiber the optical transmission verification, a total transmission capacity of 1.06Pbit/s, the net spectral efficiency of 113bit / s / Hz. By third-party testing to verify that the realization of "1.06Pbit / s large capacity multi-core optical fiber single-mode optical transmission system" for the first time, reached the international advanced level.

Meanwhile, the core chip and the optical fiber used in the experiment were independently developed, with completely independent intellectual property rights. Silicon coherent optical transceiver chip, State Key Laboratory of optical communication technology and networks, and beacon communication Accelink jointly developed by the National Innovation Center photoelectron information, including integrated optical transmission, modulation, received on a silicon chip of less than 30mm2 nearly 60 active and passive optical components, and can support C + L-band simultaneously, is the highest degree of integration of domestic commercial photonic integrated chip. By this process and technological breakthroughs to solve the inter-channel single-mode optical fiber 19 Pin crosstalk problems, the adjacent core isolation better than -40dB, and the impact of interference between "Drive" and "lane" down lowest.


http://www.inpai.com.cn/news/tx/20190213/16515.html