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Zhang Wei School of Microelectronics, Fudan University research group successfully developed the first one between ordinary MOSFET transistor and a half between the floating gate transistor floating gate transistor (SFGT). August 9, the U.S. "Science" magazine published the research results. This is the first time Chinese scientists published in the magazine field of microelectronic devices papers, marking China's advanced IC technology innovation in the global chain of a major breakthrough.
According to reports, the metal - oxide - semiconductor field-effect transistor (MOSFET) is currently the most basic integrated circuit devices, and our common U disk and other flash devices, the use of another is called a floating gate the transistor device. The researchers took a tunneling field effect transistor (TFET) and the floating gate devices combine to form a new "semi-floating gate" structural components, called semi-floating gate transistors. It has a high density and low power consumption the obvious advantages, can replace the static random access memory portion (SRAM), dynamic random access memory and can be applied (DRAM), and the active area image sensor chip (APS) fields.
"In these areas, with independent intellectual property rights in China, and can be applied to products almost none. "Zhang Wei said that as a basis for electronic devices, semi-floating gate transistors in the memory and image-sensing potential application areas such as market size of more than 30 billion U.S. dollars. It will contribute to the successful development of China has mastered the core technology of integrated circuits, resulting in the international field of chip design and manufacturing gradually get more right to speak.
Unlike laboratory studies based on carbon nanotubes, graphene transistors and other new materials, semi-floating gate transistor is a standard silicon CMOS process based microelectronic devices. SFGT prototype devices laboratory at Fudan University successfully developed, and is compatible with standard CMOS process SFGT devices in the domestic production line has been successfully produced.
"semi-floating-gate transistor compatible with existing mainstream IC manufacturing process, has a good industrial base. "Zhang Wei, said, however, has a patent does not mean that the core has a vast future market. Although the application of semi-floating gate transistors broad market, but the premise is to optimize the layout of the core patents.
China developed the first semi-floating-gate transistors for the microelectronics rare accomplishment - About China
According to reports, the metal - oxide - semiconductor field-effect transistor (MOSFET) is currently the most basic integrated circuit devices, and our common U disk and other flash devices, the use of another is called a floating gate the transistor device. The researchers took a tunneling field effect transistor (TFET) and the floating gate devices combine to form a new "semi-floating gate" structural components, called semi-floating gate transistors. It has a high density and low power consumption the obvious advantages, can replace the static random access memory portion (SRAM), dynamic random access memory and can be applied (DRAM), and the active area image sensor chip (APS) fields.
"In these areas, with independent intellectual property rights in China, and can be applied to products almost none. "Zhang Wei said that as a basis for electronic devices, semi-floating gate transistors in the memory and image-sensing potential application areas such as market size of more than 30 billion U.S. dollars. It will contribute to the successful development of China has mastered the core technology of integrated circuits, resulting in the international field of chip design and manufacturing gradually get more right to speak.
Unlike laboratory studies based on carbon nanotubes, graphene transistors and other new materials, semi-floating gate transistor is a standard silicon CMOS process based microelectronic devices. SFGT prototype devices laboratory at Fudan University successfully developed, and is compatible with standard CMOS process SFGT devices in the domestic production line has been successfully produced.
"semi-floating-gate transistor compatible with existing mainstream IC manufacturing process, has a good industrial base. "Zhang Wei, said, however, has a patent does not mean that the core has a vast future market. Although the application of semi-floating gate transistors broad market, but the premise is to optimize the layout of the core patents.
China developed the first semi-floating-gate transistors for the microelectronics rare accomplishment - About China
