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One or two of the listed names below are gonna win the Nobel Prize for Physics in the not-too-distant future。
Cui-Zu Chang1,2,*, Jinsong Zhang1,*, Xiao Feng1,2,*, Jie Shen2,*, Zuocheng Zhang1, Minghua Guo1, Kang Li2, Yunbo Ou2, Pang Wei2, Li-Li Wang2, Zhong-Qing Ji2, Yang Feng1, Shuaihua Ji1, Xi Chen1, Jinfeng Jia1, Xi Dai2, Zhong Fang2, Shou-Cheng Zhang3, Ke He2,, Yayu Wang1,, Li Lu2, Xu-Cun Ma2, Qi-Kun Xue1,2,
+ Author Affiliations
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China.
3Department of Physics, Stanford University, Stanford, CA 943054045, USA.
↵Corresponding author. E-mail: qkxue@mail.tsinghua.edu.cn (Q.K.X.); kehe@iphy.ac.cn (K.H.); yayuwang@tsinghua.edu.cn (Y.W.)
↵* These authors contributed equally to this work.
Abstract
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e2, accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
http://www.sciencemag.org/content/early/2013/03/13/science.1234414
Cui-Zu Chang1,2,*, Jinsong Zhang1,*, Xiao Feng1,2,*, Jie Shen2,*, Zuocheng Zhang1, Minghua Guo1, Kang Li2, Yunbo Ou2, Pang Wei2, Li-Li Wang2, Zhong-Qing Ji2, Yang Feng1, Shuaihua Ji1, Xi Chen1, Jinfeng Jia1, Xi Dai2, Zhong Fang2, Shou-Cheng Zhang3, Ke He2,, Yayu Wang1,, Li Lu2, Xu-Cun Ma2, Qi-Kun Xue1,2,
+ Author Affiliations
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China.
3Department of Physics, Stanford University, Stanford, CA 943054045, USA.
↵Corresponding author. E-mail: qkxue@mail.tsinghua.edu.cn (Q.K.X.); kehe@iphy.ac.cn (K.H.); yayuwang@tsinghua.edu.cn (Y.W.)
↵* These authors contributed equally to this work.
Abstract
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e2, accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
http://www.sciencemag.org/content/early/2013/03/13/science.1234414